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Fodchuk І. М. Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry [Електронний ресурс] / І. М. Fodchuk, V. V. Dovganyuk, Т. V. Litvinchuk, V. P. Kladko, М. V. Slobodian, O. Yo. Gudymenko, Z. Swiatek // Semiconductor physics, quantum electronics & optoelectronics. - 2010. - Vol. 13, № 2. - С. 209-213. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2010_13_2_21 Structural changes in silicon single crystals irradiated with high-energy electrons (E = 18 MeV) were studied. The peculiarities of diffraction reflection curve behaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocal space maps (HR-RSMs) were found as a function of the radiation dose. The generalized dynamic theory of X-ray Bragg-diffraction in crystals comprising defects of several types (spherical and disc-shaped clusters as well as dislocation loops) and a damaged near-surface layer was used for explanation.
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Novіkov S. M. Calculated images of dislocations in crystals on section topograms [Електронний ресурс] / S. M. Novіkov, І. M. Fodchuk, D. G. Fedortsov, A. Ya. Struk // Semiconductor physics, quantum electronics & optoelectronics. - 2010. - Vol. 13, № 3. - С. 268-272. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2010_13_3_9
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